IGZO target
This oxide target is the base material for the oxide semiconductor IGZO, which enables high reliability and high-definition panel images that could not be achieved with conventional amorphous silicon panel structures.
We have succeeded in mass-producing large targets and provide products with a variety of compositions to meet customer needs. In addition, we use our own MMF method for manufacturing, just like ITO targets.
*Cylindrical targets are also available.
(For characteristic values, please refer to the cylindrical target page .)
We have succeeded in mass-producing large targets and provide products with a variety of compositions to meet customer needs. In addition, we use our own MMF method for manufacturing, just like ITO targets.
*Cylindrical targets are also available.
(For characteristic values, please refer to the cylindrical target page .)
Applications
For flat panel displays and touch panels
Characteristic Value
| standard | unit | remarks | ||
|---|---|---|---|---|
| Composition *1 | In | 1 | at ratio | - |
| Ga | 1 | - | ||
| Zn | 1 | - | ||
| purity | IGZO | ≧99.99 | % | - |
| Relative Density | ≥99.5 | % |
- |
|
*1 In addition to In:Ga:Zn:O=1:1:1:4, we can manufacture various compositions.
Manufacturing process
Ultra-high density sputtering target made from MMF™ sintered body using our unique manufacturing process
This is our own new manufacturing method (slurry molding technology).
Characteristic
- Reduction of nodules
- Reduction of particles and metal foreign matter
- Reduction of abnormal discharge (arcing)
Production Base
Japan: 2081 Tofune, Omuta City, Fukuoka Prefecture (Miike target Plant)
Taiwan: No. 6, Wei 5th Rd., Wuqi Dist., Taichung City (Mitsui Electronic Materials Co.,Ltd.)
Product Line
